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FDD Bi - Directional RF Power Amplifier 2W SMA-50KFD Interface Type -7dB Input Level

FDD Bi - Directional RF Power Amplifier 2W SMA-50KFD Interface Type -7dB Input Level

  • FDD Bi - Directional RF Power Amplifier 2W SMA-50KFD Interface Type -7dB Input Level
FDD Bi - Directional RF Power Amplifier 2W SMA-50KFD Interface Type -7dB Input Level
Product Details:
Place of Origin: China
Brand Name: Huanuo
Certification: CE/FCC/ROHS
Model Number: HN-720FDDAMP
Payment & Shipping Terms:
Minimum Order Quantity: 1pcs
Price: Negotiation
Packaging Details: Professional carton box package
Delivery Time: 2~3 working days
Payment Terms: T/T
Supply Ability: 500 pieces per month
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Detailed Product Description
Working Frequency: Can Customized Working Temperature: -20~+70℃
Interface Type: SMA-50KFD Operating Voltage: 11V~+18V
Gain: 32dB±1dB Input Level: -7dB
Dimension: 120*53*15mm Weight: 176g
High Light:

radio frequency amplifier

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rf power amplifier module

2W FDD bi-directional power amplifier

 

 

 

  • Radio frequency index:
Test Item Index Note
Power amplifier Working Frequency (MHz) 300~860MHz (other frequencies can customized)  
Max output power(dBm) 32dBm±1dBm (No ALC control)
Passband group delay(ns) ≤50ns  
Gain(dB) 32dB±1dB  
Passband Fluctuation ≤1dB (Peak to peak value)
Input level(dB) -7dB  
Shoulder ratio(dBc) ≤-30dBc  
Operating voltage +11V~+18V Vdc  
Working current ≤1.8A_12V  
Working temperature -20~+70  
Interface type SMA-50KFD  
Weight 176g  
Module dimensions(mm) 120*53*15mm Without joint
 

 

 

 

    

Contact Details
Shenzhen Huanuo Innovate Technology Co.,Ltd

Contact Person: Miss. Wendy

Fax: 86-755-8830-8460

Send your inquiry directly to us (0 / 3000)

Contact

Address: Unit J,Floor 16,Block C,NEO building,Area Futian,Shenzhen,Guangdong,China.